TY  - BOOK
AU  - Shur,Michael S.
AU  - Maki,Paul A.
AU  - Kolodzey,James
TI  - Advanced Semiconductor Devices: Proceedings of the 2006 Lester Eastman Conference
T2  - Selected Topics in Electronics and Systems Ser.
SN  - 9789812770332
AV  - TK7874.L47 2006 
U1  - 621.3815 
PY  - 2007///
CY  - Singapore
PB  - World Scientific Publishing Co Pte Ltd
KW  - Semiconductors -- Congresses
KW  - Very high speed integrated circuits -- Congresses
KW  - Electronic books
N1  - Intro -- CONTENTS -- Preface -- I. Wide Band Gap Devices -- Wide-Bandgap Semiconductor Devices for Automotive Applications M. Sugimoto, H. Ueda, T.Uesugi and T. Kachi -- 1. Introduction -- 2. Requirements of Automotive Applications for Power Device in the Future -- 2.1. Normally-off operation -- 2.2. High breakdown voltage -- 2.3. Low on-resistance and high current densig -- 2.4. High temperature operation -- 2.5. Vertical operation -- 3. Our Development of GaN Power Devices -- 3.1. Normally-off operation -- 3.2. High breakdown voltage -- 3.3. Low on-resistance and high current operation -- 3.4. High temperature operation -- 3.5. Vertical operation -- 4. Conclusions -- 5. Acknowledgements -- References -- A GaN on SiC HFET Device Technology for Wireless Infrastructure Applications B. Green, H. Henry, K. Moore, J. Abdou, R. Lawrence, F. Clayton, M. Miller, J. Crowder, E. Mares, O. Hartin, C. Liu and C. Weitzel -- 1. Introduction -- 2. Freescale GaN HFET Technology and Small Device Performance -- 3. High Power Amplifier Performance and Thermal Analysis -- 3.1. Thermal Analysis -- 3.2. Effect of Source Vias on Gain and Thermal Performance -- 4. Conclusion -- References -- Drift Velocity Limitation in GaN HEMT Channels A. Matulionis -- 1. Introduction -- 2. Pauli constraint -- 3. Channel self-heating -- 4. Alloy scattering -- 5. Hot phonons -- Acknowledgments -- References -- Simulations of Field-Plated and Recessed Gate Gallium Nitride-Based Heterojunction Field-E.ect Transistors V. O. Turin, M. S. Shur and D. B. Veksler -- 1. Introduction -- 2. Simulated Device -- 3. Numerical Simulations -- References -- Low Temperature Electroluminescence of Green and Deep Green GaInN/GaN Light Emitting Diodes Y. Li, W. Zhao, Y. Xia, M. Zhu, J. Senawiratne, T. Detchprohm and C. Wetzel -- 1. Introduction -- 2. Experimental Procedures -- 3. Results and Discussion; 4. Conclusions -- References -- Spatial Spectral Analysis in High Brightness GaInN/GaN Light Emitting Diodes T. Detchprohm, Y. Xia, J. Senawiratne, Y. Li, M. Zhu, W. Zhao, Y. Xi, E. F. Schubert and C. Wetzel -- 1. Introduction -- 2. Experimental Procedures -- 2.1 Sample Structures -- 2.2 Cathodoluminescence Spectroscopy -- 3. Results and Discussion -- Intensity and wavelength distribution of CL spectra -- 4. Conclusions -- References -- Self-Induced Surface Texturing of Al2O3 by Means of Inductively Coupled Plasma Reactive Ion Etching in Cl2 Chemistry P. Batoni, E. B. Stokes, T. K. Shah, M. D. Hodge and T. J. Suleski -- Introduction -- Self-induced Surface Texturing -- Results and Discussions -- Acknowledgments -- References -- Field and Thermionic Field Transport in Aluminium Gallium Arsenide Heterojunction Barriers D. V. Morgan and A. Porch -- 1. Introduction -- 2. Theory, Results and Discussion -- 3. Conclusions -- References -- Electrical Characteristics and Carrier Lifetime Measurements in High Voltage 4H-SiC PiN Diodes P. A. Losee, C. Li, R. J. Kumar, T. P. Chow, I. B. Bhat and R. J. Gutmann -- 1. Introduction -- 2. Device Fabrication -- 3. Lifetime Measurements from Experimental Transient Characteristics -- 4. Comparing Simulated and Experimental Performance -- 5. Summary -- Acknowledgement -- References -- Geometry and Short Channel Effects on Enhancement-Mode n-Channel GaN MOSFETs on p and n- GaN/Sapphire Substrates W. Huang, T. Khan and T. P. Chow -- 1. Introduction -- 2. Device Structures and Fabrication -- 3. Experimental Results -- 3.1 Geometry Effects -- 3.2 Short Channel Effects -- 4. Summary -- Acknowledgement -- References -- 4H-SiC Vertical RESURF Schottky Recti.ers and MOSFETs Y. Wang, P. A. Losee and T. P. Chow -- 1. Introduction -- 2. Simulation of 4H-Sic Schottky Rectifier -- 3. Simulation of 4H-SIC MOSFET; 4. Implementation in Sic -- 5. Summary -- References -- Present Status and Future Directions of SiGe HBT Technology M. H. Khater, T. N. Adam, R. Krishnasamy, M. E. Dahlstrom, J.-S. Rieh, K. T. Schonenberg, B. A. Orner, F. Pagette, K. Stein and D. C. Ahlgren -- 1. Introduction and Overview -- 2. SiGe HBT Device Structure -- 3. SiGe HBT Technology: Current Status -- 3.1. Vertical Scaling and Impuriw Profire Engineering -- 3.2. Lateral Scaling and Device Structure Modifications -- 3.3. State-of-the-Art SiGe HBT Peroformance Path (IBW -- 4. SiGe HBT Technology: Future Directions -- 4.1. SIC Implant Species -- 4.2. Lateral Scaling and Device Structure Modifications -- 4.3. Extended SiGe HBT Technology Performance Path: Example Case -- 5. Summary -- 6. Acknowledgments -- References -- Optical Properties of GaInN/GaN Multi-Quantum Well Structure and Light Emitting Diode Grown by Metalorganic Chemical Vapor Phase Epitaxy J. Senawiratne, M. Zhu, W. Zhao, Y. Xia, Y. Li, T. Detchprohm and C. Wetzel -- 1. Introduction -- 2. Experimental -- 3. Results and Discussion -- 4. Conclusion -- References -- Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer Y. Sun and L. F. Eastman -- 1. Introduction -- 2. Experimental results and discussion -- 3. Conclusions -- Reference -- Above 2 A/mm Drain Current Density of GaN HEMTs Grown on Sapphire F. Medjdoub, J.-F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, N. Grandjean and E. Kohn -- 1. Introduction -- 2. Growth and processing -- 3. Experimental results -- 4. Conclusion -- Acknowledgement -- References -- Focused Thermal Beam Direct Patterning on InGaN during Molecular Beam Epitaxy X. Chen, W. J. Scha. and L. F. Eastman -- 1. Introduction -- 2. Experimental details -- 3. Results and discussion -- 4. Conclusion -- Acknowledgments -- References; II. Terahertz and Millimeter Wave Devices -- Temperature-Dependent Microwave Performance of Sb-Heterostructure Backward Diodes for Millimeter-Wave Detection N. Su, Z. Zhang, P. Fay, H. P. Moyer, R. D. Rajavel and J. Schulman -- 1. Introduction -- 2. Device Structure and Fabrication -- 3. Temperature-dependent Device Performance -- 4. Theoretical Analysis and Discussions -- 5. Conclusion -- 6. Acknowledgements -- References -- A Mixed-Signal Row/Column Architecture for Very Large Monolithic mm-Wave Phased Arrays C. Carta, M. Seo and M. Rodwell -- 1. Introduction -- 2. System Architecture and Design -- 3. Conclusion -- References -- Terahertz Emission from Electrically Pumped Silicon Germanium Intersubband Devices N. Sustersic, S. Kim, P.-C. Lv, M. Coppinger, T. Troeger and J. Kolodzey -- 1. Introduction -- 2. Device Fabrication -- 3. Electroluminescence Measurements -- 4. Results and Discussion -- 5. Conclusions -- 6. Acknowledgments -- 7. References -- Terahertz Sensing of Materials G. Xuan, S. Ghosh, S. Kim, P-C. Lv, T. Buma, B. Weng, K. Barner and J. Kolodzey -- 1. Introduction -- 2. Experimental -- 2.1. DNA sensing -- 2.2. Drywall Transport of Terahertz -- 3. Summary -- 4. Acknowledgements -- References -- III. Silicon and SiGe Devices -- Negative Bias Temperature Instability in TiN/HF-Silicate Based Gate Stacks N. A. Chowdhury, D. Misra and N. Rahim -- 1. Introduction -- 2. Experimental -- 3. Results and Discussions -- 4. Conclusions -- 5. Acknowledgments -- References -- Power Adaptive Control of Dense Con.gured Super-Self-Aligned Back-Gate Planar Transistors H. Lin, H. Liu, A. Kumar, U. Avci, J. S. Van Delden and S. Tiwari -- 1. Introduction -- 2. Device Fabrication -- 3. Device Characterizations -- 4. Summary -- References -- Non-Volatile High Speed & Low Power Charge Trapping Devices M. K. Kim and S. Tiwari -- 1. Introduction; 2. Experiments -- 3. Results and Discussion -- 4. Summary -- 5. Acknowledgments -- References -- High Performance SiGeC/Si Near-IR Electrooptic Modulators and Photodetectors M. Schubert and F. Rana -- 1. Introduction -- 2. Material Properties -- 3. Electrooptic Modulator Design -- 4. Photodetector Design -- 5. Conclusion -- References -- IV. Nanoelectronics and Ballistic Devices -- Hybrid Nanomaterials for Multi-Spectral Infrared Photodetection A. D. Sti.-Roberts -- 1. Achieving Multi-spectral Infrared Photodetection Using Hybrid Nanomaterials -- 2. Dopant Control in InAs/GaAs Quantum Dot Infrared Photodetectors -- 3. Fourier Transform Infrared Absorbance in CdSe/MEH-PPV Nanocomposites on Semiconductor Substrates -- 4. Conclusions -- 5. Acknowledgments -- References -- Ballistic Electron Acceleration Negative-Di.erential-Conductivity Devices B. Aslan, L. F. Eastman, W. J. Scha., X. Chen, M. G. Spencer, H.-Y. Cha, A. Dyson and B. K. Ridley -- 1. Introduction -- 2. Experiments -- 3. Results and Discussion -- 4. Conclusion -- 5. Acknowledgement -- 6. References -- V. Photoluminescence and Photocapacitance -- Understanding Ultraviolet Emitter Performance Using Intensity Dependent Time-Resolved Photoluminescence M. Wraback, G. A. Garrett, A. V. Sampath and P. H. Shen -- 1. Introduction -- 2. Experimental -- 3. Time-Resolved Photoluminescence Metrics for UV LED and Laser Performance -- 4. Enhanced Luminescence Efficiency Through Nanoscale Compositional Inhomogeneities in AlGaN -- 5. Conclusion -- Acknowledgements -- References -- Photocapacitance of Selectively Doped AlGaAs/GaAs Heterostructures Containing Deep Traps N. B. Gorev, I. F. Kodzhespirova, E. N. Privalov, N. Khuchua, L. Khvedelidze and M. S. Shur -- 1. Introduction -- 2. Calculation of Barrier Capacitance and Photocapacitance -- 3. Results and Discussion -- 4. Conclusions -- References; Author Index
N2  - This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many "firsts" and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and "hot off the press" results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology
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