HeteroSiC and WASMPE 2013 : Selected, Peer Reviewed Papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice.

By: Zielinski, MarcinMaterial type: TextTextSeries: Materials Science ForumPublisher: Durnten : Trans Tech Publications, Limited, 2014Copyright date: ©2015Edition: 1st edDescription: 1 online resource (148 pages)Content type: text Media type: computer Carrier type: online resourceISBN: 9783038266785Subject(s): Materials science -- Congresses | Power electronics -- Congresses | Semiconductors -- Materials -- CongressesGenre/Form: Electronic books.Additional physical formats: Print version:: HeteroSiC and WASMPE 2013 : Selected, Peer Reviewed Papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, NiceDDC classification: 621.38152 LOC classification: TK7871.85 -- .W67 2013ebOnline resources: Click to View
Contents:
Intro -- HeteroSiC & WASMPE 2013 -- Preface and Conference Committees -- Table of Contents -- Chapter 1: 3C-SiC - Epitaxy, Characterization and Devices -- 3C-SiC: New Interest for MEMS Devices -- Strain Evaluation and Fracture Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared Membrane -- Buffer Layer Optimization for the Growth of State of the Art 3C-SiC/Si -- Analysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si1-xGex/Si(001) Heterostructures -- Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate -- Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport -- SiC NWs Grown on Silicon Substrate Using Fe as Catalyst -- Chapter 2: 4H-SiC and 15R-SiC - Growth and Characterization -- Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers -- Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD -- Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport -- Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC -- Nondestructive Evaluation of Photoelectrical Properties of a PVT Grown Bulk 15R-SiC Crystal -- Chapter 3: Related Materials - Gallium Nitride, Graphene and Silicon -- Potentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates -- Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications -- High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure -- Synthesis and Characterization of (3-Aminopropyl)Triethoxysilane-Modified Epitaxial Graphene -- Origin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4H-SiC (0001) Surfaces.
Anti-Reflective Porous Silicon Features by Substrate Conformal Imprint Lithography for Silicon Photovoltaic Applications -- Chapter 4: SiC Devices and Device Processing -- Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode -- 10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters -- Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect -- Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures -- Stable Phosphorus Passivated SiO2/4H-SiC Interface Using Thin Oxides -- Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3 -- The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors -- Keywords Index -- Authors Index.
Summary: Collection of selected, peer reviewed papers from the 2013 HeteroSiC-WASMPE, June 17-19, 2013, Nice, France. The 25 papers are grouped as follows: Chapter 1: 3C-SiC - Epitaxy, Characterization and Devices; Chapter 2: 4H-SiC and 15R-SiC - Growth and Characterization; Chapter 3: Related Materials - Gallium Nitride, Graphene and Silicon; Chapter 4: SiC Devices and Device Processing.
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Intro -- HeteroSiC & WASMPE 2013 -- Preface and Conference Committees -- Table of Contents -- Chapter 1: 3C-SiC - Epitaxy, Characterization and Devices -- 3C-SiC: New Interest for MEMS Devices -- Strain Evaluation and Fracture Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared Membrane -- Buffer Layer Optimization for the Growth of State of the Art 3C-SiC/Si -- Analysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si1-xGex/Si(001) Heterostructures -- Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate -- Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport -- SiC NWs Grown on Silicon Substrate Using Fe as Catalyst -- Chapter 2: 4H-SiC and 15R-SiC - Growth and Characterization -- Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers -- Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD -- Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport -- Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC -- Nondestructive Evaluation of Photoelectrical Properties of a PVT Grown Bulk 15R-SiC Crystal -- Chapter 3: Related Materials - Gallium Nitride, Graphene and Silicon -- Potentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates -- Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications -- High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure -- Synthesis and Characterization of (3-Aminopropyl)Triethoxysilane-Modified Epitaxial Graphene -- Origin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4H-SiC (0001) Surfaces.

Anti-Reflective Porous Silicon Features by Substrate Conformal Imprint Lithography for Silicon Photovoltaic Applications -- Chapter 4: SiC Devices and Device Processing -- Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode -- 10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters -- Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect -- Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures -- Stable Phosphorus Passivated SiO2/4H-SiC Interface Using Thin Oxides -- Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3 -- The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors -- Keywords Index -- Authors Index.

Collection of selected, peer reviewed papers from the 2013 HeteroSiC-WASMPE, June 17-19, 2013, Nice, France. The 25 papers are grouped as follows: Chapter 1: 3C-SiC - Epitaxy, Characterization and Devices; Chapter 2: 4H-SiC and 15R-SiC - Growth and Characterization; Chapter 3: Related Materials - Gallium Nitride, Graphene and Silicon; Chapter 4: SiC Devices and Device Processing.

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Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2018. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.

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