Intro -- HeteroSiC & WASMPE 2011 -- Preface, Sponsors and Committees -- Table of Contents -- Chapter 1: SiC Heteroepitaxial Growth -- Progress in 3C-SiC Growth and Novel Applications -- Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate -- CVD Growth of 3C-SiC on 4H-SiC Substrate -- The Influence of C3H8 and CBr4 on Structural and Morphological Properties of 3C-SiC Layers -- Structural Characterization of Heteroepitaxial 3C-SiC -- Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates -- Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer -- Chapter 2: Microsystems and Microstructures Based on SiC -- Study of 3C-SiC Mechanical Resonators, Filters and Mixers -- Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application -- Strain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical Modelling -- Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition -- Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 Plasma -- Material Limitations for the Development of High Performance SiC NWFETs -- Selective β-SiC/SiO2 Core-Shell NW Growth on Patterned Silicon Substrate -- High Frequency 3C-SiC AFM Cantilever Using Thermal Actuation and Metallic Piezoresistive Detection -- Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers -- Chapter 3: Devices on SiC -- High Quality 3C-SiC Substrate for MOSFET Fabrication -- Characterization of Band Diagrams of Different Metal-SiO2-SiC(3C) Structures -- Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs.

The Influence of Gate Material, SiO2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors -- Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour -- Visible and Deep Ultraviolet Study of SiC/SiO2 Interface -- High Temperature Capability of High Voltage 4H-SiC JBS -- Parallel and Serial Association of SiC Light Triggered Thyristors -- Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs -- Chapter 4: Characterization: Devices and Material -- Structural Characterization of Graphene Grown by Thermal Decomposition of Off-Axis 4H-SiC (0001) -- Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy -- Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si -- On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures -- Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications -- Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC -- Evaluation of Correct Value of Richardson's Constant by Analyzing the Electrical Behavior of Three Different Diodes at Different Temperatures -- Ti Thickness Influence for Ti/Ni Ohmic Contacts on N-Type 3C-SiC -- Investigation of Al-Ti Ohmic Contact to N-Type 4H-SiC -- Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode -- Chapter 5: GaN: Devices and Material -- MOCVD Grown AlGaN/GaN Transistors on Si Substrate for High Power Device Applications -- Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications.

Investigations on the Origin of the Ohmic Behavior for Ti/Al Based Contacts on n-Type GaN -- Si+ Implantation and Activation in GaN Comparison of GaN on Sapphire and GaN on Silicon -- Comprehensive Analysis of Process Variability on AlGaN/GaN HEMTs through TCAD Simulations -- GaN-on-Silicon Evaluation for High-Power MMIC Applications -- Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process -- Chapter 6: Graphene -- Almost Free Standing Graphene on SiC(000-1) and SiC(11-20) -- Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual Substrates -- Graphene Nano-Biosensors for Detection of Cancer Risk -- Graphene/SiC Interface Control Using Propane-Hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111) -- Keywords Index -- Authors Index.

The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered.Review from Book News Inc.:The 46 papers in this volume have been selected from the Fourth Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), which occurred in June 2011 in Tours, France. Contributors working in physics and materials science, microelectronics, nanotechnology, and other sciences in Europe, the US, and Japan discuss silicon carbide heteroepitaxy growth and other materials, polytypes, and bandgap engineering; gallium nitride and diamond power electronics; and advances in graphene technology, its introduction in devices, and its relationships to silicon carbide epitaxial material. Sections include papers on microsystems and microstructures based on silicon carbide, devices on silicon carbide, and device and material characterization.

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Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2018. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.