Frontiers in Electronics : Proceedings of the Workshop on Frontiers in Electronics 2009.

By: Cristoloveanu, SorinContributor(s): Shur, Michael SMaterial type: TextTextSeries: Selected Topics in Electronics and Systems SerPublisher: Singapore : World Scientific Publishing Co Pte Ltd, 2013Copyright date: ©2013Description: 1 online resource (241 pages)Content type: text Media type: computer Carrier type: online resourceISBN: 9789814383721Subject(s): Electronics -- Congresses | Optoelectronics -- CongressesGenre/Form: Electronic books.Additional physical formats: Print version:: Frontiers in Electronics : Proceedings of the Workshop on Frontiers in Electronics 2009DDC classification: 621.381 LOC classification: TK7801 .W67 2013Online resources: Click to View
Contents:
Intro -- CONTENTS -- Preface -- Advanced Terahertz and Photonics Devices -- Broadband Terahertz Wave Generation, Detection and Coherent Control Using Terahertz Gas Photonics J. Liu, J. Dai, X. Lu, I. C. Ho and X. C. Zhang -- 1. Introduction -- 2. The Mechanism of THz Generation and Detection in Gas -- 3. THz Wave Generation and Detection in Different Gases -- 4. THz Remote Generation and Detection -- 5. Coherent Control of THz Generation -- 6. Conclusion -- Acknowledgement -- References -- How do We Lose Excitation in the Green? C. Wetzel, Y. Xia, W. Zhao, Y. Li, M. Zhu, S. You, L. Zhao, W. Hou, C. Stark and M. Dibiccari -- 1. Introduction -- 2. Material and Methods -- 3. Experimental -- 4. Discussion -- 5. Conclusions -- Acknowledgments -- References -- Silicon Finfets as Detectors of Terahertz and Sub-Terahertz Radiation W. Stillman, C. Donais, S. Rumyantsev, M. Shur, D. Veksler, C. Hobbs, C. Smith, G. Bersuker, W. Taylor and R. Jammy -- 1. Introduction -- 2. Plasma Wave Detectors -- 3. FinFET Structure -- 4. Response Measurements -- 5. Noise Equivalent Power -- 6. Conclusion -- Acknowledgments -- References -- Progress in Development of Room Temperature CW GaSb based Diode Lasers for 2-3.5 µm Spectral Region T. Hosoda, J. Chen, G. Tsvid, D. Westerfeld, R. Liang, G. Kipshidze, L. Shterengas and G. Belenky -- 1. Introduction -- 2. Results and Discussion -- 2.1. Waveguide core width and asymmetry optimization for 2 µm emitting devices -- 2.2. CW power characteristics over 2.2 to 3.3 µm wavelength range -- 3. Conclusion -- Acknowledgements -- References -- WDM Demultiplexing by Using Surface Plasmon Polaritons D. K. Mynbaev and V. Sukharenko -- 1. Introduction -- 2. The Frequency of SPPs -- 3. The Concept of WDM Demultiplexing with SPPs -- 4. Summary -- Acknowledgment -- References.
Silicon and Germanium on Insulator and Advanced CMOS and MOSHFETs -- Connecting Electrical and Structural Dielectric Characteristics G. Bersuker, D. Veksler, C. D. Young, H. Park, W. Taylor, P. Kirsch, R. Jammy, L. Morassi, A. Padovani and L. Larcher -- 1. Introduction -- 2. Noise Generating Defects in High-k Gate Stacks -- 2.1. Analysis of Random Telegraph Signal Noise (RTN) -- 2.2. Extracting defect characteristics -- 3. Defects Responsible for High-k Gate Stack Degradation/Breakdown -- 3.1. Physical evidences of O-vacancies in IL -- 3.2. Defects identification -- 4. Vfb Roll-Off Phenomenon -- 4.1. Roll-off mechanism -- 4.2. Generation of positively charged defects -- 4.3. Origin of R-O defects and R-O suppression -- References -- Advanced Solutions for Mobility Enhancement in SOI MOSFETs L. Pham-Nguyen, C. Fenouillet-Beranger, P. Perreau, S. Denorme, G. Ghibaudo, O. Faynot, T. Skotnicki, A. Ohata, M. Casse, I. Ionica, W. van den Daele, K-H. Park, S-J. Chang, Y-H. Bae, M. Bawedin and S. Cristoloveanu -- 1. Introduction -- 2. Series Resistance Reduction -- 3. High-K Dielectrics -- 4. Metal Gate -- 5. Strain -- 6. Novel Materials -- 7. Conclusions -- Acknowledgements -- References -- Electron Scattering in Buried InGaAs/High-K MOS Channels S. Oktyabrsky, P. Nagaiah, V. Tokranov, M. Yakimov, R. Kambhampati, S. Koveshnikov, D. Veksler, N. Goel and G. Bersuker -- 1. Introduction -- 2. Experimental Details -- 3. Mobility Calculation -- 4. Results and Discussion -- 5. Conclusions -- Acknowledgement -- References -- Low Frequency Noise and Interface Density of Traps in InGaAs MOSFETs with GdScO3 High-K Dielectric S. Rumyantsev, W. Stillman, M. Shur, T. Heeg, D. G. Schlom, S. Koveshnikov, R. Kambhampati, V. Tokranov and S. Oktyabrsky -- 1. Introduction -- 2. Experimental Details -- 3. Results and Discussion -- 4. Conclusions -- References.
Low-Power Biomedical Signal Monitoring System for Implantable Sensor Applications M. R. Haider, J. Holleman, S. Mostafa and S. K. Islam -- 1. Introduction -- 2. Biomedical Sensors and Signal Monitoring -- 3. Biomedical Sensor Signal Monitoring System Architecture -- 3.1. Low noise amplifier -- 3.2. Signal processing and telemetry -- 3.2.1. Current to frequency converter block -- 3.2.2. FSK transmitter block -- 4. Measurement Results -- 4.1. Amplifier results -- 4.1.1. Neural amplifier measurements -- 4.1.2. Amplifier discussion -- 4.2. Signal processing and telemetry results -- 5. Conclusion -- References -- Nanomaterials and Nanodevices -- III-V Compound Semiconductor Nanowires for Optoelectronic Device Applications Q. Gao, H. J. Joyce, S. Paiman, J. H. Kang, H. H. Tan, Y. Kim, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, J. Zou and C. Jagadish -- 1. Introduction -- 2. Experimental -- 3. Results and Discussion -- 3.1. GaAs nanowires on GaAs substrates -- 3.2. GaAs nanowires on Si substrates -- 3.3. InP nanowires on InP substrates -- 4. Conclusion -- Acknowledgments -- References -- Electron Heating in Quantum-Dot Structures with Collective Potential Barriers L. H. Chien, A. Sergeev, N. Vagidov, V. Mitin and S. Birner -- 1. Introduction -- 2. Nanostructures with Collective Barriers -- 3. Photoelectron Kinetics in Strong Electric Fields -- Acknowledgements -- References -- Electronic Structure of Graphene Nanoribbons Subjected to Twist and Nonuniform Strain A. Dobrinsky, A. Sadrzadeh, B. I. Yakobson and J. Xu -- 1. Introduction -- 2. Tight-Binding Formulation, Hückel Mode -- 3. Tight-Binding Approximation -- 4. Inhomogeneous Deformations -- 5. Conclusion -- Appendix A -- References -- Low-Frequency Electronic Noise in Graphene Transistors: Comparison with Carbon Nanotubes G. Liu, W. Stillman, S. Rumyantsev, M. Shur and A. A. Balandin.
1. Introduction -- 2. Device Fabrication -- 3. Noise Measurements -- 4. Comparison with Carbon Nanotubes -- 5. Conclusions -- Acknowledgements -- References -- ZnO Nanocrystalline High Performance Thin Film Transistors B. Bayraktaroglu, K. Leedy and R. Neidhard -- 1. Introduction -- 2. Experiment -- 2.1. Thin Film Preparation and Characterization -- 2.1.1. PLD-grown ZnO Thin Films -- 2.1.2. PECVD and ALD-grown Gate Insulator Films -- 2.1.3. TFT Fabrication and Characterization -- 3. Results and Discussion -- 3.1. Nanocrystalline ZnO Films -- 3.2. Low Frequency Devices -- 3.3. Influence of ZnO Growth Temperature -- 3.4. Influence of Gate Dielectric -- 3.5. High Frequency Devices -- 4. Summary and Conclusions -- Acknowledgements -- References -- Zinc Oxide Nanoparticles for Ultraviolet Photodetection S. Sawyer, L. Qin and C. Shing -- 1. Introduction -- 2. ZnO Background -- 3. Top-Down Wet-Chemistry ZnO Nanoparticle based UV Photodetectors -- 3.1. Parasitic green photoluminescence reduction and enhanced UV absorption -- 3.2. Photoconductive and Metal-Semiconductor-Metal (MSM) device response -- 3.3. ZnO nanoparticles deposited on GaN-based substrates -- 4. Summary -- Acknowledgments -- References -- Carbon-Based Nanoelectromechanical Devices S. Bengtsson, P. Enoksson, F. A. Ghavanini, K. Engström, P. Lundgren, E. E. B. Campbell, J. Ek-Weis, N. Olofsson and A. Eriksson -- 1. Introduction -- 2. Modeling -- 2.1. Switches -- 2.2. Varactors -- 3. Device Fabrication and Characterization -- 3.1. Individual Vertically Aligned Carbon Nanofibers -- 3.2. Carbon Nanotube Forest -- 3.3. CMOS Compatibility -- 4. Conclusion -- Acknowledgments -- References.
Charge Puddles and Edge Effect in a Graphene Device as Studied by a Scanning Gate Microscope J. Chae, H. J. Yang, H. Baek, J. Ha, Y. Kuk, S. Y. Jung, Y. J. Song, N. B. Zhitenev, J. A. Stroscio, S. J. Woo and Y.-W. Son -- 1. Introduction -- 2. Transport Property of GD -- 3. Scanning Gate Microscope -- 4. Sample Preparation -- 5. Results and Discussion -- References -- Wide Band Gap Technology for High Power and UV Photonics -- Novel Approaches to Microwave Switching Devices using Nitride Technology G. Simin, J. Wang, B. Khan, J. Yang, A. Sattu, R. Gaska and M. Shur -- 1. Introduction -- 2. Key III-N Switch Performance Parameters and Limitations -- 3. RF Switches with Low-Conductive-Layer Coating -- 4. Gateless Traveling Wave Switch 8 -- 5. AlInN/GaN Heterostructures for RF Switches -- Acknowledgments -- References -- Author Index.
Summary: Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.
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Intro -- CONTENTS -- Preface -- Advanced Terahertz and Photonics Devices -- Broadband Terahertz Wave Generation, Detection and Coherent Control Using Terahertz Gas Photonics J. Liu, J. Dai, X. Lu, I. C. Ho and X. C. Zhang -- 1. Introduction -- 2. The Mechanism of THz Generation and Detection in Gas -- 3. THz Wave Generation and Detection in Different Gases -- 4. THz Remote Generation and Detection -- 5. Coherent Control of THz Generation -- 6. Conclusion -- Acknowledgement -- References -- How do We Lose Excitation in the Green? C. Wetzel, Y. Xia, W. Zhao, Y. Li, M. Zhu, S. You, L. Zhao, W. Hou, C. Stark and M. Dibiccari -- 1. Introduction -- 2. Material and Methods -- 3. Experimental -- 4. Discussion -- 5. Conclusions -- Acknowledgments -- References -- Silicon Finfets as Detectors of Terahertz and Sub-Terahertz Radiation W. Stillman, C. Donais, S. Rumyantsev, M. Shur, D. Veksler, C. Hobbs, C. Smith, G. Bersuker, W. Taylor and R. Jammy -- 1. Introduction -- 2. Plasma Wave Detectors -- 3. FinFET Structure -- 4. Response Measurements -- 5. Noise Equivalent Power -- 6. Conclusion -- Acknowledgments -- References -- Progress in Development of Room Temperature CW GaSb based Diode Lasers for 2-3.5 µm Spectral Region T. Hosoda, J. Chen, G. Tsvid, D. Westerfeld, R. Liang, G. Kipshidze, L. Shterengas and G. Belenky -- 1. Introduction -- 2. Results and Discussion -- 2.1. Waveguide core width and asymmetry optimization for 2 µm emitting devices -- 2.2. CW power characteristics over 2.2 to 3.3 µm wavelength range -- 3. Conclusion -- Acknowledgements -- References -- WDM Demultiplexing by Using Surface Plasmon Polaritons D. K. Mynbaev and V. Sukharenko -- 1. Introduction -- 2. The Frequency of SPPs -- 3. The Concept of WDM Demultiplexing with SPPs -- 4. Summary -- Acknowledgment -- References.

Silicon and Germanium on Insulator and Advanced CMOS and MOSHFETs -- Connecting Electrical and Structural Dielectric Characteristics G. Bersuker, D. Veksler, C. D. Young, H. Park, W. Taylor, P. Kirsch, R. Jammy, L. Morassi, A. Padovani and L. Larcher -- 1. Introduction -- 2. Noise Generating Defects in High-k Gate Stacks -- 2.1. Analysis of Random Telegraph Signal Noise (RTN) -- 2.2. Extracting defect characteristics -- 3. Defects Responsible for High-k Gate Stack Degradation/Breakdown -- 3.1. Physical evidences of O-vacancies in IL -- 3.2. Defects identification -- 4. Vfb Roll-Off Phenomenon -- 4.1. Roll-off mechanism -- 4.2. Generation of positively charged defects -- 4.3. Origin of R-O defects and R-O suppression -- References -- Advanced Solutions for Mobility Enhancement in SOI MOSFETs L. Pham-Nguyen, C. Fenouillet-Beranger, P. Perreau, S. Denorme, G. Ghibaudo, O. Faynot, T. Skotnicki, A. Ohata, M. Casse, I. Ionica, W. van den Daele, K-H. Park, S-J. Chang, Y-H. Bae, M. Bawedin and S. Cristoloveanu -- 1. Introduction -- 2. Series Resistance Reduction -- 3. High-K Dielectrics -- 4. Metal Gate -- 5. Strain -- 6. Novel Materials -- 7. Conclusions -- Acknowledgements -- References -- Electron Scattering in Buried InGaAs/High-K MOS Channels S. Oktyabrsky, P. Nagaiah, V. Tokranov, M. Yakimov, R. Kambhampati, S. Koveshnikov, D. Veksler, N. Goel and G. Bersuker -- 1. Introduction -- 2. Experimental Details -- 3. Mobility Calculation -- 4. Results and Discussion -- 5. Conclusions -- Acknowledgement -- References -- Low Frequency Noise and Interface Density of Traps in InGaAs MOSFETs with GdScO3 High-K Dielectric S. Rumyantsev, W. Stillman, M. Shur, T. Heeg, D. G. Schlom, S. Koveshnikov, R. Kambhampati, V. Tokranov and S. Oktyabrsky -- 1. Introduction -- 2. Experimental Details -- 3. Results and Discussion -- 4. Conclusions -- References.

Low-Power Biomedical Signal Monitoring System for Implantable Sensor Applications M. R. Haider, J. Holleman, S. Mostafa and S. K. Islam -- 1. Introduction -- 2. Biomedical Sensors and Signal Monitoring -- 3. Biomedical Sensor Signal Monitoring System Architecture -- 3.1. Low noise amplifier -- 3.2. Signal processing and telemetry -- 3.2.1. Current to frequency converter block -- 3.2.2. FSK transmitter block -- 4. Measurement Results -- 4.1. Amplifier results -- 4.1.1. Neural amplifier measurements -- 4.1.2. Amplifier discussion -- 4.2. Signal processing and telemetry results -- 5. Conclusion -- References -- Nanomaterials and Nanodevices -- III-V Compound Semiconductor Nanowires for Optoelectronic Device Applications Q. Gao, H. J. Joyce, S. Paiman, J. H. Kang, H. H. Tan, Y. Kim, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, J. Zou and C. Jagadish -- 1. Introduction -- 2. Experimental -- 3. Results and Discussion -- 3.1. GaAs nanowires on GaAs substrates -- 3.2. GaAs nanowires on Si substrates -- 3.3. InP nanowires on InP substrates -- 4. Conclusion -- Acknowledgments -- References -- Electron Heating in Quantum-Dot Structures with Collective Potential Barriers L. H. Chien, A. Sergeev, N. Vagidov, V. Mitin and S. Birner -- 1. Introduction -- 2. Nanostructures with Collective Barriers -- 3. Photoelectron Kinetics in Strong Electric Fields -- Acknowledgements -- References -- Electronic Structure of Graphene Nanoribbons Subjected to Twist and Nonuniform Strain A. Dobrinsky, A. Sadrzadeh, B. I. Yakobson and J. Xu -- 1. Introduction -- 2. Tight-Binding Formulation, Hückel Mode -- 3. Tight-Binding Approximation -- 4. Inhomogeneous Deformations -- 5. Conclusion -- Appendix A -- References -- Low-Frequency Electronic Noise in Graphene Transistors: Comparison with Carbon Nanotubes G. Liu, W. Stillman, S. Rumyantsev, M. Shur and A. A. Balandin.

1. Introduction -- 2. Device Fabrication -- 3. Noise Measurements -- 4. Comparison with Carbon Nanotubes -- 5. Conclusions -- Acknowledgements -- References -- ZnO Nanocrystalline High Performance Thin Film Transistors B. Bayraktaroglu, K. Leedy and R. Neidhard -- 1. Introduction -- 2. Experiment -- 2.1. Thin Film Preparation and Characterization -- 2.1.1. PLD-grown ZnO Thin Films -- 2.1.2. PECVD and ALD-grown Gate Insulator Films -- 2.1.3. TFT Fabrication and Characterization -- 3. Results and Discussion -- 3.1. Nanocrystalline ZnO Films -- 3.2. Low Frequency Devices -- 3.3. Influence of ZnO Growth Temperature -- 3.4. Influence of Gate Dielectric -- 3.5. High Frequency Devices -- 4. Summary and Conclusions -- Acknowledgements -- References -- Zinc Oxide Nanoparticles for Ultraviolet Photodetection S. Sawyer, L. Qin and C. Shing -- 1. Introduction -- 2. ZnO Background -- 3. Top-Down Wet-Chemistry ZnO Nanoparticle based UV Photodetectors -- 3.1. Parasitic green photoluminescence reduction and enhanced UV absorption -- 3.2. Photoconductive and Metal-Semiconductor-Metal (MSM) device response -- 3.3. ZnO nanoparticles deposited on GaN-based substrates -- 4. Summary -- Acknowledgments -- References -- Carbon-Based Nanoelectromechanical Devices S. Bengtsson, P. Enoksson, F. A. Ghavanini, K. Engström, P. Lundgren, E. E. B. Campbell, J. Ek-Weis, N. Olofsson and A. Eriksson -- 1. Introduction -- 2. Modeling -- 2.1. Switches -- 2.2. Varactors -- 3. Device Fabrication and Characterization -- 3.1. Individual Vertically Aligned Carbon Nanofibers -- 3.2. Carbon Nanotube Forest -- 3.3. CMOS Compatibility -- 4. Conclusion -- Acknowledgments -- References.

Charge Puddles and Edge Effect in a Graphene Device as Studied by a Scanning Gate Microscope J. Chae, H. J. Yang, H. Baek, J. Ha, Y. Kuk, S. Y. Jung, Y. J. Song, N. B. Zhitenev, J. A. Stroscio, S. J. Woo and Y.-W. Son -- 1. Introduction -- 2. Transport Property of GD -- 3. Scanning Gate Microscope -- 4. Sample Preparation -- 5. Results and Discussion -- References -- Wide Band Gap Technology for High Power and UV Photonics -- Novel Approaches to Microwave Switching Devices using Nitride Technology G. Simin, J. Wang, B. Khan, J. Yang, A. Sattu, R. Gaska and M. Shur -- 1. Introduction -- 2. Key III-N Switch Performance Parameters and Limitations -- 3. RF Switches with Low-Conductive-Layer Coating -- 4. Gateless Traveling Wave Switch 8 -- 5. AlInN/GaN Heterostructures for RF Switches -- Acknowledgments -- References -- Author Index.

Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.

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Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2018. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.

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